Infineon IKW30N65EL5XKSA1 Single IGBT, 85 A 650 V, 3-Pin PG-TO247
- RS stock no.:
- 226-6113
- Mfr. Part No.:
- IKW30N65EL5XKSA1
- Manufacturer:
- Infineon
Subtotal (1 pack of 2 units)*
R 128,33
(exc. VAT)
R 147,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 580 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | R 64.165 | R 128.33 |
*price indicative
- RS stock no.:
- 226-6113
- Mfr. Part No.:
- IKW30N65EL5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 85 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 227 W | |
| Package Type | PG-TO247 | |
| Configuration | Single | |
| Channel Type | N | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 85 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 227 W | ||
Package Type PG-TO247 | ||
Configuration Single | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.
Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
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