Infineon IKW30N65EL5XKSA1, Type N-Channel IGBT Single Transistor IC, 85 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

R 147,51

(exc. VAT)

R 169,636

(inc. VAT)

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Units
Per unit
Per Pack*
2 +R 73.755R 147.51

*price indicative

Packaging Options:
RS stock no.:
226-6113
Mfr. Part No.:
IKW30N65EL5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

85A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

30 V

Maximum Operating Temperature

175°C

Length

41.9mm

Height

5.3mm

Series

LowVCE(sat) Fifth Generation

Width

16.3 mm

Standards/Approvals

JEDEC

Automotive Standard

No

The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.

Low gate charge QG

Maximum junction temperature 175°C

Qualified according to JEDEC for target applications

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