Infineon IKZ50N65EH5XKSA1, N-Channel IGBT, 85 A 650 V, 4-Pin TO-247, Through Hole
- RS stock no.:
- 215-6677
- Mfr. Part No.:
- IKZ50N65EH5XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 230,13
(exc. VAT)
R 264,65
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 115.065 | R 230.13 |
| 10 - 98 | R 112.19 | R 224.38 |
| 100 - 248 | R 108.825 | R 217.65 |
| 250 - 498 | R 104.47 | R 208.94 |
| 500 + | R 100.29 | R 200.58 |
*price indicative
- RS stock no.:
- 215-6677
- Mfr. Part No.:
- IKZ50N65EH5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 85A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 273W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 85A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 273W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon 650v duopack insulated-gate bipolar transistor and diode copacked with rapid 1 fast and soft antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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