IXYS HiperFET, Polar Type N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227 IXFN64N50P

Image representative of range

Bulk discount available

Subtotal (1 unit)*

R 626,10

(exc. VAT)

R 720,02

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 8 unit(s) ready to ship from another location
  • Plus 29 unit(s) shipping from 20 May 2026
  • Plus 10 unit(s) shipping from 24 May 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 4R 626.10
5 - 24R 610.45
25 - 99R 592.14
100 - 249R 568.45
250 +R 545.71

*price indicative

Packaging Options:
RS stock no.:
194-568
Distrelec Article No.:
302-53-377
Mfr. Part No.:
IXFN64N50P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

85mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

700W

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Operating Temperature

150°C

Length

38.23mm

Standards/Approvals

No

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links