IXYS Type N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227 IXFN64N50P
- RS stock no.:
- 194-568
- Distrelec Article No.:
- 302-53-377
- Mfr. Part No.:
- IXFN64N50P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 645,38
(exc. VAT)
R 742,19
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 8 unit(s) ready to ship from another location
- Plus 37 unit(s) shipping from 01 January 2026
- Plus 10 unit(s) shipping from 07 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | R 645.38 |
| 5 - 24 | R 629.25 |
| 25 - 99 | R 610.37 |
| 100 - 249 | R 585.96 |
| 250 + | R 562.52 |
*price indicative
- RS stock no.:
- 194-568
- Distrelec Article No.:
- 302-53-377
- Mfr. Part No.:
- IXFN64N50P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 700W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Width | 25.42 mm | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 30253377 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 700W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Width 25.42 mm | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Distrelec Product Id 30253377 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 61 A 4-Pin SOT-227 IXFN64N50P
- IXYS HiperFET 66 A 4-Pin SOT-227 IXFN80N50P
- IXYS HiperFET 40 A 4-Pin SOT-227 IXFN48N60P
- IXYS HiperFET 115 A 4-Pin SOT-227 IXFN140N20P
- IXYS HiperFET 150 A 4-Pin SOT-227 IXFN180N15P
- IXYS HiperFET 115 A 4-Pin SOT-227 IXFN140N30P
- IXYS HiperFET 53 A 4-Pin SOT-227 IXFN60N80P
- IXYS HiperFET 86 A 4-Pin SOT-227 IXFN102N30P