IXYS HiperFET, Polar Type N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227 IXFN64N50P

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Subtotal (1 unit)*

R 627,75

(exc. VAT)

R 721,91

(inc. VAT)

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  • Ready to ship from 19 February 2027
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Units
Per unit
1 - 4R 627.75
5 - 24R 612.06
25 - 99R 593.70
100 - 249R 569.95
250 +R 547.15

*price indicative

Packaging Options:
RS stock no.:
194-568
Distrelec Article No.:
302-53-377
Mfr. Part No.:
IXFN64N50P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

85mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

150nC

Maximum Power Dissipation Pd

700W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

25.42 mm

Length

38.23mm

Standards/Approvals

No

Height

9.6mm

Automotive Standard

No

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