IXYS HiperFET, Polar Type N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50P

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Subtotal (1 unit)*

R 663,26

(exc. VAT)

R 762,75

(inc. VAT)

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Units
Per unit
1 - 4R 663.26
5 - 24R 646.68
25 - 99R 627.28
100 - 249R 602.19
250 +R 578.10

*price indicative

Packaging Options:
RS stock no.:
194-029
Distrelec Article No.:
302-53-378
Mfr. Part No.:
IXFN80N50P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

500V

Series

HiperFET, Polar

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

700W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

195nC

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.2mm

Height

9.6mm

Width

25.07 mm

Automotive Standard

No

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