Vishay IRFU Type P-Channel MOSFET, 1.8 A, 400 V Enhancement, 3-Pin IPAK
- RS stock no.:
- 919-4505
- Mfr. Part No.:
- IRFU9310PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tube of 75 units)*
R 1 156,80
(exc. VAT)
R 1 330,35
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 13,500 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | R 15.424 | R 1,156.80 |
| 150 - 225 | R 15.039 | R 1,127.93 |
| 300 - 675 | R 14.587 | R 1,094.03 |
| 750 - 975 | R 14.004 | R 1,050.30 |
| 1050 + | R 13.444 | R 1,008.30 |
*price indicative
- RS stock no.:
- 919-4505
- Mfr. Part No.:
- IRFU9310PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | IPAK | |
| Series | IRFU | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.38 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type IPAK | ||
Series IRFU | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 2.38 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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