Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK

RS stock no.:: 919-4911
Mfr. Part No.:: IRFU9024NPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK

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Bulk discount available

Subtotal (1 tube of 75 units)*

R 992,325

(exc. VAT)

R 1 141,20

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 2,850 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Tube*
75 - 75	R 13.231	R 992.33
150 - 225	R 12.90	R 967.50
300 - 675	R 12.513	R 938.48
750 - 1425	R 12.013	R 900.98
1500 +	R 11.532	R 864.90

*price indicative

RS stock no.:: 919-4911
Mfr. Part No.:: IRFU9024NPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	175mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Power Dissipation Pd	38W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	150°C
	Height	6.22mm
	Width	2.39 mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 175mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Power Dissipation Pd 38W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 150°C
	Height 6.22mm
	Width 2.39 mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFU9024NPBF

This P-channel MOSFET is intended for high-efficiency power management applications. It has a maximum continuous drain current of 11A and a maximum drain-source voltage of 55V, adept at handling significant loads while ensuring reliability in various operational conditions. Its through-hole mounting type allows for seamless integration into existing designs, making it a key component for professionals in automation and electronics.

Features & Benefits

• Low Rds(on) of 175mΩ enhances energy efficiency

• Maximum power dissipation of 38W supports robust performance

• Single transistor configuration simplifies design processes

• Complies with lead-free standards for environmentally conscious applications

Applications

• Suitable for power supplies and conversion circuits

• Utilised in motor control systems for effective operation

• Integrated into battery management systems for improved performance

• Applicable in automotive environments for dependable power handling

• Ideal for industrial automation equipment requiring robust performance

What is the temperature range for stable operation?

The component operates effectively within a temperature range of -55°C to +150°C, ensuring reliable performance in various environments.

How can it handle high power loads efficiently?

With a maximum power dissipation of 38W and low Rds(on) of 175mΩ, it manages high power loads with minimal energy loss.

Is it compatible with a standard PCB layout?

Yes, the through-hole mounting type is compatible with standard PCB layouts, facilitating straightforward integration.

What criteria should be considered for gate voltage?

A gate-source voltage range of -20V to +20V provides flexibility; optimum performance is achieved at 10V for effective operation.

How does it contribute to efficiency in power management?

Its low on-resistance and high current capability maximise efficiency in various power management scenarios.