Vishay IRFL9014 Type P-Channel Power MOSFET, -1.8 A, -60 V Enhancement, 4-Pin SOT-223 IRFL9014TRPBF
- RS stock no.:
- 710-4654
- Mfr. Part No.:
- IRFL9014TRPBF
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 179,65
(exc. VAT)
R 206,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 310 unit(s) shipping from 22 June 2026
- Plus 650 unit(s) shipping from 30 October 2026
- Plus 2,500 unit(s) shipping from 04 December 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 17.965 | R 179.65 |
| 50 - 90 | R 17.516 | R 175.16 |
| 100 - 240 | R 16.991 | R 169.91 |
| 250 - 490 | R 16.311 | R 163.11 |
| 500 + | R 15.659 | R 156.59 |
*price indicative
- RS stock no.:
- 710-4654
- Mfr. Part No.:
- IRFL9014TRPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | -1.8A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | IRFL9014 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.1W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -5.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Height | 1.45mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id -1.8A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series IRFL9014 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.1W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -5.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 3.7mm | ||
Length 6.7mm | ||
Height 1.45mm | ||
Automotive Standard No | ||
Vishay IRFL9014 Series Power MOSFET, -60V Drain Source Voltage, 500mΩ Drain Source Resistance - IRFL9014TRPBF
This power MOSFET is a P‑channel enhancement device designed for surface‑mount power switching in electronic and electromechanical systems. It operates across a wide temperature range and is intended for applications requiring controlled high‑side switching and thermal robustness in Compact SOT‑223 packaging.
Features and Benefits:
• P‑channel configuration enables simplified high‑side switching
• Rated for -60V drain‑to‑source withstand for robust voltage margins
• Continuous drain current of -1.8A supports moderate load currents
• Low on‑resistance of 500mΩ reduces conduction losses
• Typical gate charge of 12nC yields predictable switching behaviour
• Power dissipation of 3.1W allows sustained operation in constrained enclosures
• Rated for -60V drain‑to‑source withstand for robust voltage margins
• Continuous drain current of -1.8A supports moderate load currents
• Low on‑resistance of 500mΩ reduces conduction losses
• Typical gate charge of 12nC yields predictable switching behaviour
• Power dissipation of 3.1W allows sustained operation in constrained enclosures
Applications
• Suitable for high‑side load switching in automation control modules
• Ideal for battery management and power path control circuits
• Used for motor driver gate networks in Compact assemblies
• Can be used for polarity protection and reverse current prevention
• Ideal for battery management and power path control circuits
• Used for motor driver gate networks in Compact assemblies
• Can be used for polarity protection and reverse current prevention
What gate voltage range is permissible for control circuitry?
The gate‑to‑source can be driven up to 20V, allowing compatibility with a range of controller output levels.
How does the thermal environment affect operational limits?
The device is specified to function from -55°C up to 150°C, so thermal design should ensure junction temperatures remain within this range for reliable operation.
What mounting considerations apply for Compact board designs?
It is supplied in a SOT‑223 surface‑mount package with four pins, enabling straightforward PCB soldering and heat transfer to the board copper.
What electrical robustness should designers expect under switching conditions?
The specified forward voltage of -5.5V and typical gate charge of 12nC inform designers about driving requirements and switching transients for reliable gate control.
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