Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1
- RS stock no.:
- 914-0227
- Distrelec Article No.:
- 304-44-440
- Mfr. Part No.:
- IPP50R190CEXKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 256,87
(exc. VAT)
R 295,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 410 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 25.687 | R 256.87 |
| 20 - 90 | R 25.045 | R 250.45 |
| 100 - 190 | R 24.294 | R 242.94 |
| 200 - 490 | R 23.322 | R 233.22 |
| 500 + | R 22.389 | R 223.89 |
*price indicative
- RS stock no.:
- 914-0227
- Distrelec Article No.:
- 304-44-440
- Mfr. Part No.:
- IPP50R190CEXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18.5A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Package Type | TO-220 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 127W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.85V | |
| Typical Gate Charge Qg @ Vgs | 47.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18.5A | ||
Maximum Drain Source Voltage Vds 550V | ||
Package Type TO-220 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 127W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.85V | ||
Typical Gate Charge Qg @ Vgs 47.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 15.95mm | ||
Width 4.57 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 4-Pin SOT-223
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