Infineon CoolMOS CE Type N-Channel MOSFET, 13 A, 550 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 897-7501
- Distrelec Article No.:
- 304-44-434
- Mfr. Part No.:
- IPA50R280CEXKSA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 133,76
(exc. VAT)
R 153,825
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 26.752 | R 133.76 |
| 50 - 245 | R 26.084 | R 130.42 |
| 250 - 495 | R 25.302 | R 126.51 |
| 500 - 1245 | R 24.29 | R 121.45 |
| 1250 + | R 23.318 | R 116.59 |
*price indicative
- RS stock no.:
- 897-7501
- Distrelec Article No.:
- 304-44-434
- Mfr. Part No.:
- IPA50R280CEXKSA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Series | CoolMOS CE | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 30.4W | |
| Forward Voltage Vf | 0.85V | |
| Typical Gate Charge Qg @ Vgs | 32.6nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.9 mm | |
| Length | 10.65mm | |
| Standards/Approvals | No | |
| Height | 16.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 550V | ||
Series CoolMOS CE | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 30.4W | ||
Forward Voltage Vf 0.85V | ||
Typical Gate Charge Qg @ Vgs 32.6nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.9 mm | ||
Length 10.65mm | ||
Standards/Approvals No | ||
Height 16.15mm | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 4-Pin SOT-223
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- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1