Infineon CoolMOS CE Type N-Channel MOSFET, 18.5 A, 550 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

R 1 575,40

(exc. VAT)

R 1 811,70

(inc. VAT)

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  • 400 unit(s) ready to ship from another location
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50 +R 31.508R 1,575.40

*price indicative

RS stock no.:
165-8158
Mfr. Part No.:
IPP50R190CEXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18.5A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

127W

Typical Gate Charge Qg @ Vgs

47.2nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

0.85V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4.57 mm

Height

15.95mm

Length

10.36mm

Automotive Standard

No

COO (Country of Origin):
MY

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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