Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

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Subtotal (1 pack of 25 units)*

R 160,025

(exc. VAT)

R 184,025

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100R 6.401R 160.03
125 - 475R 6.241R 156.03
500 - 975R 6.054R 151.35
1000 - 2475R 5.812R 145.30
2500 +R 5.579R 139.48

*price indicative

Packaging Options:
RS stock no.:
130-0911
Mfr. Part No.:
IPN50R1K4CEATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

8.2nC

Forward Voltage Vf

0.83V

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.7mm

Length

6.7mm

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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