Infineon CoolMOS CE N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

Image representative of range

Bulk discount available
View bulk pricing options

Subtotal (1 pack of 25 units)*

R 213,73

(exc. VAT)

R 245,77

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
25 - 100R 8.549R 213.73
125 - 475R 8.335R 208.38
500 - 975R 8.085R 202.13
1000 - 2475R 7.762R 194.05
2500 +R 7.451R 186.28

*price indicative

Packaging Options:
RS stock no.:
130-0911
Mfr. Part No.:
IPN50R1K4CEATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.2nC

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-40°C

Forward Voltage Vf

830mV

Maximum Gate Source Voltage Vgs

-30V, +30V

Maximum Operating Temperature

150°C

Length

6.7mm

Width

3.7mm

Standards/Approvals

No

Height

1.7mm

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links