N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 Infineon BSS205NH6327XTSA1

RS stock no.:: 892-2374
Mfr. Part No.:: BSS205NH6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 Infineon BSS205NH6327XTSA1

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Bulk discount available

Subtotal (1 pack of 100 units)**

R 392 40

(exc. VAT)

R 451 30

(inc. VAT)

6800 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per unit	Per Pack**
100 - 100	R 3,924	R 392,40
200 - 900	R 3,826	R 382,60
1000 - 1900	R 3,711	R 371,10
2000 - 4900	R 3,562	R 356,20
5000 +	R 3,42	R 342,00

**price indicative

RS stock no.:: 892-2374
Mfr. Part No.:: BSS205NH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1

This N-channel MOSFET is a vital component in contemporary electronic applications, especially in automation and automotive sectors. Designed for efficient switching applications, it features a compact SOT-23 surface mount package. Its capacity to handle significant drain currents and voltages makes it suitable for industrial and automotive contexts, ensuring consistent performance.

Features & Benefits

• Maximum continuous drain current of 2.5A
• Maximum drain-source voltage of 20V
• Minimal Rds(on) of 85 mΩ enhances power efficiency
• Qualified to AEC-Q101 for automotive applications

Applications

• Used in automotive power management systems
• Suitable for DC-DC converters in electronic devices
• Employed in motor control for efficient switching
• Ideal for power amplification in RF

What kind of protection does this offer against voltage spikes?

It is avalanche rated and can handle high energy pulses, providing protection in dynamic environments.

What is the significance of the low Rds(on) in this device?

A low on-state resistance improves power loss management and enhances efficiency, making it suitable for high-efficiency applications.

How can this be installed on a circuit board?

It can be soldered onto a PCB in the SOT-23 package, ensuring secure mounting for surface-mount technology applications.

What are the typical switching characteristics at the rated voltage?

The device displays quick turn-on and turn-off times, improving switching efficiency in high-speed applications.

Is this compatible with other components in automotive circuits?

Yes, it meets automotive standards and functions effectively with various devices in power management circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.5 A
Maximum Drain Source Voltage	20 V
Series	OptiMOS™ 2
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	85 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Minimum Gate Threshold Voltage	0.7V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	2.9mm
Typical Gate Charge @ Vgs	2.1 nC @ 4.5 V
Width	0.1mm
Number of Elements per Chip	1
Height	1.3mm
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101
Forward Diode Voltage	1.1V