N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NH6327XTSA1

RS stock no.:: 165-5868
Mfr. Part No.:: BSS806NH6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NH6327XTSA1

Subtotal (1 reel of 3000 units)**

R 5 127 00

(exc. VAT)

R 5 895 00

(inc. VAT)

3000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Reel**
3000 +	R 1,709	R 5 127,00

**price indicative

RS stock no.:: 165-5868
Mfr. Part No.:: BSS806NH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

Infineon OptiMOS™ 2 Series MOSFET, 2.3A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS806NH6327XTSA1

This MOSFET is tailored for efficient power management in various electronic applications, supporting a maximum continuous drain current of 2.3A and a maximum drain source voltage of 20V. Its low resistance features help to minimise energy losses, making it suitable for applications that require a high level of confidence under stringent conditions.

Features & Benefits

• N-channel configuration enhances switching performance
• Enhancement mode reduces off-state leakage
• Ultra logic level compatibility suitable for 1.8V applications
• Integrated avalanche rating improves robustness under stress
• AEC-Q101 qualified for automotive applications ensures long-lasting performance
• Surface mount design enables straightforward integration into compact circuitry

Applications

• Ideal for power management in automotive electronics
• Utilised for driving low-voltage loads in automation systems
• Suitable for switching in power supplies
• Designed for high temperature operating environments

Can it be used in automotive applications?

Yes, it is AEC-Q101 qualified, ensuring its suitability for automotive environments.

What is the operating temperature range?

The operating temperature range is between -55°C and +150°C.

How does its RDS(on) value impact circuit performance?

A low RDS(on) value reduces power loss during operation, enhancing overall efficiency.

What is the significance of its gate threshold voltage?

The gate threshold voltage indicates when the MOSFET begins conducting, which is vital for controlling switch timing.

How can I mount this component?

It features a surface mount design, facilitating easy integration onto PCBs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.3 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Series	OptiMOS™ 2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	82 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.75V
Minimum Gate Threshold Voltage	0.3V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Typical Gate Charge @ Vgs	1.7 nC @ 2.5 V
Length	2.9mm
Number of Elements per Chip	1
Transistor Material	Si
Width	1.3mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1mm