Infineon OptiMOS 2 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 18 275,00

(exc. VAT)

R 21 025,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 7.31R 18,275.00
5000 - 5000R 7.128R 17,820.00
7500 +R 6.914R 17,285.00

*price indicative

RS stock no.:
215-2505
Mfr. Part No.:
IPD33CN10NGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

58W

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

N-channel, normal level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free lead plating

Qualified according to JEDEC for target application

Ideal for high-frequency switching and synchronous rectification

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