N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NEH6327XTSA1

RS stock no.:: 827-0109
Mfr. Part No.:: BSS806NEH6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NEH6327XTSA1

Image representative of range

14750 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (On a Reel of 250)

R 0,929

(exc. VAT)

R 1,068

(inc. VAT)

Units	Per unit	Per Reel*
250 - 750	R 0,929	R 232,25
1000 - 2750	R 0,906	R 226,50
3000 - 5750	R 0,879	R 219,75
6000 +	R 0,843	R 210,75

*price indicative

RS stock no.:: 827-0109
Mfr. Part No.:: BSS806NEH6327XTSA1
Manufacturer:: Infineon

BSS806NE OptiMOS2 Small Signal Transistor Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.3 A
Maximum Drain Source Voltage	20 V
Series	OptiMOS™ 2
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	82 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.75V
Minimum Gate Threshold Voltage	0.3V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Width	1.3mm
Length	2.9mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	1.7 nC @ 2.5 V
Minimum Operating Temperature	-55 °C
Height	1mm

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NEH6327XTSA1

Infineon OptiMOS™2 Power MOSFET Family