Infineon OptiMOS 2 Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1
- RS stock no.:
- 214-4333
- Mfr. Part No.:
- BSD214SNH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 200 units)*
R 312,80
(exc. VAT)
R 359,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 8,200 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 200 | R 1.564 | R 312.80 |
| 400 - 400 | R 1.525 | R 305.00 |
| 600 - 600 | R 1.479 | R 295.80 |
| 800 - 800 | R 1.42 | R 284.00 |
| 1000 + | R 1.363 | R 272.60 |
*price indicative
- RS stock no.:
- 214-4333
- Mfr. Part No.:
- BSD214SNH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Length | 2.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.35 mm | ||
Length 2.02mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™2 Small-Signal-Transistor are Qualified according to AEC Q101.
N-channel
Enhancement mode
Super Logic level (2.5V rated)
Related links
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP BSL215CH6327XTSA1
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS806NH6327XTSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS806NEH6327XTSA1