Infineon OptiMOS 2 Type N-Channel MOSFET, 69 A, 100 V Enhancement, 3-Pin TO-220 IPP12CN10LGXKSA1
- RS stock no.:
- 892-2135
- Mfr. Part No.:
- IPP12CN10LGXKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 171,98
(exc. VAT)
R 197,775
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 30 unit(s) ready to ship from another location
- Plus 1,790 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 34.396 | R 171.98 |
| 25 - 120 | R 33.536 | R 167.68 |
| 125 - 245 | R 32.53 | R 162.65 |
| 250 - 620 | R 31.228 | R 156.14 |
| 625 + | R 29.978 | R 149.89 |
*price indicative
- RS stock no.:
- 892-2135
- Mfr. Part No.:
- IPP12CN10LGXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Distrelec Product Id | 304-44-439 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 15.95mm | ||
Distrelec Product Id 304-44-439 | ||
Automotive Standard No | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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