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Infineon OptiMOS 2 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 3-Pin TO-252 IPD33CN10NGATMA1

RS stock no.:: 215-2506
Mfr. Part No.:: IPD33CN10NGATMA1
Manufacturer:: Infineon

Infineon OptiMOS 2 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 3-Pin TO-252 IPD33CN10NGATMA1

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Bulk discount available

Subtotal (1 pack of 20 units)*

R 223,58

(exc. VAT)

R 257,12

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 12,240 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 20	R 11.179	R 223.58
40 - 80	R 10.90	R 218.00
100 - 220	R 10.573	R 211.46
240 - 480	R 10.15	R 203.00
500 +	R 9.744	R 194.88

*price indicative

RS stock no.:: 215-2506
Mfr. Part No.:: IPD33CN10NGATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	OptiMOS 2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Power Dissipation Pd	58W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series OptiMOS 2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Power Dissipation Pd 58W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD33CN10NGATMA1

The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

N-channel, normal level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free lead plating

Qualified according to JEDEC for target application

Ideal for high-frequency switching and synchronous rectification

Infineon OptiMOS 2 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 3-Pin TO-252 IPD33CN10NGATMA1

FREE delivery for orders over R 1,500.00

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