N-Channel MOSFET, 1.4 A, 20 V, 3-Pin SOT-323 Infineon BSS816NWH6327XTSA1
- RS stock no.:
- 166-0980
- Mfr. Part No.:
- BSS816NWH6327XTSA1
- Manufacturer:
- Infineon
Subtotal (1 reel of 3000 units)**
R 1 929 00
(exc. VAT)
R 2 217 00
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Reel** |
---|---|---|
3000 - 27000 | R 0,643 | R 1 929,00 |
30000 - 72000 | R 0,627 | R 1 881,00 |
75000 + | R 0,608 | R 1 824,00 |
**price indicative
- RS stock no.:
- 166-0980
- Mfr. Part No.:
- BSS816NWH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.4 A | |
Maximum Drain Source Voltage | 20 V | |
Series | OptiMOS™ 2 | |
Package Type | SOT-323 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 240 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 0.75V | |
Minimum Gate Threshold Voltage | 0.3V | |
Maximum Power Dissipation | 500 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Number of Elements per Chip | 1 | |
Width | 1.25mm | |
Typical Gate Charge @ Vgs | 0.6 nC @ 2.5 V | |
Length | 2mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Forward Diode Voltage | 1.1V | |
Height | 0.8mm | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.4 A | ||
Maximum Drain Source Voltage 20 V | ||
Series OptiMOS™ 2 | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.75V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Width 1.25mm | ||
Typical Gate Charge @ Vgs 0.6 nC @ 2.5 V | ||
Length 2mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.1V | ||
Height 0.8mm | ||
Minimum Operating Temperature -40 °C | ||
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