N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M
- RS stock no.:
- 891-2954
- Mfr. Part No.:
- TK31A60W,S4VX(M
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 2 units)**
R 123,34
(exc. VAT)
R 141,84
(inc. VAT)
8 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
---|---|---|
2 - 8 | R 61,67 | R 123,34 |
10 - 18 | R 60,13 | R 120,26 |
20 - 48 | R 58,325 | R 116,65 |
50 - 98 | R 55,99 | R 111,98 |
100 + | R 53,75 | R 107,50 |
**price indicative
- RS stock no.:
- 891-2954
- Mfr. Part No.:
- TK31A60W,S4VX(M
- Manufacturer:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 31 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-220SIS | |
Series | TK | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 88 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.7V | |
Maximum Power Dissipation | 45 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Width | 4.5mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 86 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 10mm | |
Forward Diode Voltage | 1.7V | |
Height | 15mm | |
Select all | ||
---|---|---|
Manufacturer Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220SIS | ||
Series TK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 88 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Width 4.5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 86 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10mm | ||
Forward Diode Voltage 1.7V | ||
Height 15mm | ||