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    N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS Toshiba TK31A60W,S4VX(M

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    Bulk discount available

    Subtotal (1 pack of 2 units)**

    R  123,34

    (exc. VAT)

    R  141,84

    (inc. VAT)

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    8 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Pack**
    2 - 8R 61,67R 123,34
    10 - 18R 60,13R 120,26
    20 - 48R 58,325R 116,65
    50 - 98R 55,99R 111,98
    100 +R 53,75R 107,50

    **price indicative

    RS stock no.:
    891-2954
    Mfr. Part No.:
    TK31A60W,S4VX(M
    Manufacturer:
    Toshiba
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    Manufacturer

    Toshiba

    Channel Type

    N

    Maximum Continuous Drain Current

    31 A

    Maximum Drain Source Voltage

    600 V

    Package Type

    TO-220SIS

    Series

    TK

    Mounting Type

    Through Hole

    Pin Count

    3

    Maximum Drain Source Resistance

    88 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    3.7V

    Maximum Power Dissipation

    45 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -30 V, +30 V

    Transistor Material

    Si

    Width

    4.5mm

    Number of Elements per Chip

    1

    Typical Gate Charge @ Vgs

    86 nC @ 10 V

    Maximum Operating Temperature

    +150 °C

    Length

    10mm

    Forward Diode Voltage

    1.7V

    Height

    15mm

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