Toshiba DTMOSIV Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-220 TK25A60X,S5X(M
- RS stock no.:
- 125-0553
- Mfr. Part No.:
- TK25A60X,S5X(M
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 330,35
(exc. VAT)
R 379,90
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 66.07 | R 330.35 |
| 25 - 45 | R 64.418 | R 322.09 |
| 50 - 120 | R 62.486 | R 312.43 |
| 125 - 245 | R 59.986 | R 299.93 |
| 250 + | R 57.586 | R 287.93 |
*price indicative
- RS stock no.:
- 125-0553
- Mfr. Part No.:
- TK25A60X,S5X(M
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | DTMOSIV | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Height | 15mm | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series DTMOSIV | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Height 15mm | ||
Length 10mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VX(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementRVQ(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O