Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S

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Subtotal (1 pack of 2 units)*

R 143,10

(exc. VAT)

R 164,56

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 71.55R 143.10
10 - 18R 69.76R 139.52
20 - 48R 67.665R 135.33
50 - 98R 64.96R 129.92
100 +R 62.36R 124.72

*price indicative

RS stock no.:
125-0563
Mfr. Part No.:
TK31E60X,S1X(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30.8A

Maximum Drain Source Voltage Vds

600V

Series

DTMOSIV

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

88mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

65nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Height

15.1mm

Standards/Approvals

No

Width

4.45 mm

Length

10.16mm

Automotive Standard

No

COO (Country of Origin):
JP

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