Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S

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Subtotal (1 pack of 4 units)*

R 148,04

(exc. VAT)

R 170,24

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 116R 37.01R 148.04
120 - 244R 36.085R 144.34
248 - 496R 35.003R 140.01
500 - 996R 33.603R 134.41
1000 +R 32.258R 129.03

*price indicative

Packaging Options:
RS stock no.:
827-6126
Mfr. Part No.:
TK12P60W,RVQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

DTMOSIV

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

340mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

-1.7V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

6.6mm

Width

6.1 mm

Height

2.3mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

MOSFET Transistors, Toshiba


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