Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S
- RS stock no.:
- 827-6126
- Mfr. Part No.:
- TK12P60W,RVQ(S
- Manufacturer:
- Toshiba
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 4 units)*
R 144,652
(exc. VAT)
R 166,348
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,552 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 116 | R 36.163 | R 144.65 |
| 120 - 244 | R 35.258 | R 141.03 |
| 248 - 496 | R 34.20 | R 136.80 |
| 500 - 996 | R 32.833 | R 131.33 |
| 1000 + | R 31.52 | R 126.08 |
*price indicative
- RS stock no.:
- 827-6126
- Mfr. Part No.:
- TK12P60W,RVQ(S
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | DTMOSIV | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series DTMOSIV | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
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