Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

R 59 042,00

(exc. VAT)

R 67 898,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +R 29.521R 59,042.00

*price indicative

RS stock no.:
173-2857
Mfr. Part No.:
TK12P60W,RVQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

DTMOSIV

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

340mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Width

6.1 mm

Standards/Approvals

No

Height

2.3mm

Length

6.6mm

Automotive Standard

No

COO (Country of Origin):
CN

MOSFET Transistors, Toshiba


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