Toshiba DTMOSIV Type N-Channel MOSFET, 39 A, 600 V Enhancement, 3-Pin TO-220 TK39A60W,S4VX(M

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Subtotal (1 unit)*

R 86,41

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R 99,37

(inc. VAT)

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1 - 4R 86.41
5 - 9R 84.25
10 - 24R 81.72
25 - 49R 78.45
50 +R 75.31

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RS stock no.:
896-2366
Mfr. Part No.:
TK39A60W,S4VX(M
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

39A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

DTMOSIV

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

50W

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Height

15mm

Width

4.5 mm

Standards/Approvals

No

Length

10mm

Automotive Standard

No

COO (Country of Origin):
MY

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