Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

RS stock no.:: 818-1352
Mfr. Part No.:: SI5935CDC-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

Bulk discount available

Price (Excl VAT) Each (In a Pack of 20)

R 3,543

(exc. VAT)

R 4,074

(inc. VAT)

2680 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
20 - 480	R 3,543	R 70,86
500 - 1480	R 3,455	R 69,10
1500 - 2980	R 3,351	R 67,02
3000 - 8980	R 3,217	R 64,34
9000 +	R 3,089	R 61,78

**price indicative

RS stock no.:: 818-1352
Mfr. Part No.:: SI5935CDC-T1-GE3
Manufacturer:: Vishay

Si5935CDC, Dual P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	3.8 A
Maximum Drain Source Voltage	20 V
Package Type	1206 ChipFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	156 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Width	1.7mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	3.1mm
Typical Gate Charge @ Vgs	7 nC @ 5 V
Transistor Material	Si
Height	1.1mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor

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