Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3

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Subtotal (1 pack of 20 units)*

R 65,10

(exc. VAT)

R 74,86

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 480R 3.255R 65.10
500 - 1480R 3.174R 63.48
1500 - 2980R 3.079R 61.58
3000 - 8980R 2.956R 59.12
9000 +R 2.838R 56.76

*price indicative

Packaging Options:
RS stock no.:
818-1352
Mfr. Part No.:
SI5935CDC-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

ChipFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

156mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

7nC

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

3.1W

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

3.1mm

Width

1.7 mm

Height

1.1mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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