Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3
- RS stock no.:
- 814-1304
- Mfr. Part No.:
- SIS415DNT-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tape of 20 units)*
R 240,14
(exc. VAT)
R 276,16
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,880 unit(s), ready to ship from another location
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 280 | R 12.007 | R 240.14 |
| 300 - 580 | R 11.707 | R 234.14 |
| 600 - 1480 | R 11.356 | R 227.12 |
| 1500 - 2980 | R 10.902 | R 218.04 |
| 3000 + | R 10.466 | R 209.32 |
*price indicative
- RS stock no.:
- 814-1304
- Mfr. Part No.:
- SIS415DNT-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET Gen III | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0095Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 55.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Width | 3.4 mm | |
| Standards/Approvals | RoHS | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET Gen III | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0095Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 55.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Width 3.4 mm | ||
Standards/Approvals RoHS | ||
Length 3.4mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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