Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 tape of 20 units)*

R 236,56

(exc. VAT)

R 272,04

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Tape*
20 - 280R 11.828R 236.56
300 - 580R 11.532R 230.64
600 - 1480R 11.186R 223.72
1500 - 2980R 10.739R 214.78
3000 +R 10.309R 206.18

*price indicative

Packaging Options:
RS stock no.:
814-1304
Mfr. Part No.:
SIS415DNT-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET Gen III

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0095Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

55.5nC

Maximum Operating Temperature

150°C

Height

0.8mm

Standards/Approvals

RoHS

Length

3.4mm

Automotive Standard

No

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links