Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 50 units)*

R 790,35

(exc. VAT)

R 908,90

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 01 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
50 - 50R 15.807R 790.35
100 - 450R 15.412R 770.60
500 - 950R 14.949R 747.45
1000 - 1450R 14.351R 717.55
1500 +R 13.777R 688.85

*price indicative

RS stock no.:
200-6849
Mfr. Part No.:
SiSS63DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

127.5A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212

Series

TrenchFET Gen III

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.8W

Maximum Gate Source Voltage Vgs

±12 V

Typical Gate Charge Qg @ Vgs

236nC

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

3.3mm

Length

3.3mm

Standards/Approvals

No

Width

3.3 mm

Automotive Standard

No

The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.

TrenchFET Gen III p-channel power MOSFET

Leadership RDS(on) in compact and thermally enhanced package

100 % Rg and UIS tested

Related links