Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

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Subtotal (1 pack of 20 units)*

R 157,70

(exc. VAT)

R 181,36

(inc. VAT)

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Last RS stock
  • Final 2,920 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
20 - 280R 7.885R 157.70
300 - 580R 7.688R 153.76
600 - 1480R 7.457R 149.14
1500 - 2980R 7.159R 143.18
3000 +R 6.872R 137.44

*price indicative

Packaging Options:
RS stock no.:
814-1213
Mfr. Part No.:
SIA449DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-363

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Forward Voltage Vf

-0.8V

Maximum Power Dissipation Pd

19W

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23.1nC

Maximum Operating Temperature

150°C

Height

0.8mm

Length

2.15mm

Width

2.15 mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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