Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

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Subtotal (1 pack of 20 units)*

R 239,66

(exc. VAT)

R 275,60

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 280R 11.983R 239.66
300 - 580R 11.684R 233.68
600 - 1480R 11.333R 226.66
1500 - 2980R 10.88R 217.60
3000 +R 10.445R 208.90

*price indicative

Packaging Options:
RS stock no.:
814-1213
Mfr. Part No.:
SIA449DJ-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Forward Voltage Vf

-0.8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23.1nC

Maximum Power Dissipation Pd

19W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

2.15mm

Height

0.8mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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