Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363

Image representative of range

Subtotal (1 reel of 3000 units)*

R 17 916,00

(exc. VAT)

R 20 604,00

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 3,000 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
3000 +R 5.972R 17,916.00

*price indicative

RS stock no.:
180-7265
Mfr. Part No.:
SI1411DH-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

0.52A

Maximum Drain Source Voltage Vds

150V

Package Type

SOT-363

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.6Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.2nC

Forward Voltage Vf

-1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

2.2mm

Standards/Approvals

No

Height

1.1mm

Width

2.4 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Siliconix SI1411DH series TrenchFET P channel power MOSFET has drain to source voltage of 150 V. It is used in active clamp circuits in DC/DC power supplies.

Small, thermally enhanced SC-70 package

Ultra low on-resistance

Pb-free

Halogen free

Related links