Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC SI4164DY-T1-GE3
- RS stock no.:
- 812-3198
- Mfr. Part No.:
- SI4164DY-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 197,84
(exc. VAT)
R 227,52
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 09 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 19.784 | R 197.84 |
| 100 - 490 | R 19.289 | R 192.89 |
| 500 - 1490 | R 18.71 | R 187.10 |
| 1500 - 2490 | R 17.962 | R 179.62 |
| 2500 + | R 17.244 | R 172.44 |
*price indicative
- RS stock no.:
- 812-3198
- Mfr. Part No.:
- SI4164DY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4164DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.72V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | JEDEC JS709A, RoHS | |
| Height | 1.55mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4164DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.72V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals JEDEC JS709A, RoHS | ||
Height 1.55mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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