Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3

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Subtotal (1 pack of 5 units)*

R 40,00

(exc. VAT)

R 46,00

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 8.00R 40.00
25 - 95R 7.80R 39.00
100 - 245R 7.566R 37.83
250 - 495R 7.264R 36.32
500 +R 6.974R 34.87

*price indicative

Packaging Options:
RS stock no.:
710-4736
Mfr. Part No.:
SI4840BDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.012Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6W

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21)

Length

5mm

Height

1.55mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


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