Vishay TrenchFET Type N-Channel MOSFET, 45.5 A, 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3

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Subtotal (1 pack of 25 units)*

R 75,50

(exc. VAT)

R 86,75

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225R 3.02R 75.50
250 - 975R 2.945R 73.63
1000 - 1475R 2.856R 71.40
1500 +R 2.742R 68.55

*price indicative

Packaging Options:
RS stock no.:
134-9696
Mfr. Part No.:
SIRA88DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45.5A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

25W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.8nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Width

5.26 mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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