Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8

Image representative of range

Subtotal (1 reel of 3000 units)*

R 53 877,00

(exc. VAT)

R 61 959,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 14 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +R 17.959R 53,877.00

*price indicative

RS stock no.:
919-4246
Mfr. Part No.:
SIRA00DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.35mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

147nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links