Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

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Subtotal (1 pack of 10 units)*

R 266,46

(exc. VAT)

R 306,43

(inc. VAT)

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Last RS stock
  • Final 2,200 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 90R 26.646R 266.46
100 - 490R 25.98R 259.80
500 - 1490R 25.201R 252.01
1500 - 2490R 24.193R 241.93
2500 +R 23.225R 232.25

*price indicative

Packaging Options:
RS stock no.:
812-3195
Mfr. Part No.:
SI4124DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

5.7W

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

IEC 61249-2-21

Width

4 mm

Height

1.55mm

Automotive Standard

No

COO (Country of Origin):
CN

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