Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 258,46

(exc. VAT)

R 297,23

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 2,200 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
10 - 90R 25.846R 258.46
100 - 490R 25.20R 252.00
500 - 1490R 24.444R 244.44
1500 - 2490R 23.466R 234.66
2500 +R 22.527R 225.27

*price indicative

Packaging Options:
RS stock no.:
812-3195
Mfr. Part No.:
SI4124DY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

20.5A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

5.7W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21

Height

1.55mm

Length

5mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links