Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

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Subtotal (1 pack of 10 units)*

R 311,53

(exc. VAT)

R 358,26

(inc. VAT)

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Last RS stock
  • Final 2,200 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
10 - 90R 31.153R 311.53
100 - 490R 30.374R 303.74
500 - 1490R 29.463R 294.63
1500 - 2490R 28.284R 282.84
2500 +R 27.153R 271.53

*price indicative

Packaging Options:
RS stock no.:
812-3195
Mfr. Part No.:
SI4124DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

20.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5.7W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

21nC

Maximum Operating Temperature

150°C

Length

5mm

Height

1.55mm

Standards/Approvals

IEC 61249-2-21

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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