Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SOIC
- RS stock no.:
- 919-4195
- Mfr. Part No.:
- SI4946BEY-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 reel of 2500 units)*
R 35 272,50
(exc. VAT)
R 40 562,50
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 14.109 | R 35,272.50 |
| 5000 - 5000 | R 13.757 | R 34,392.50 |
| 7500 - 12500 | R 13.344 | R 33,360.00 |
| 15000 - 20000 | R 12.81 | R 32,025.00 |
| 22500 + | R 12.298 | R 30,745.00 |
*price indicative
- RS stock no.:
- 919-4195
- Mfr. Part No.:
- SI4946BEY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.7W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.55mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.7W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.55mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Dual N-Channel MOSFET, Vishay Semiconductor
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