MPN

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

RS stock no.:: 751-5348
Mfr. Part No.:: ZXMHC6A07N8TC
Manufacturer:: DiodesZetex

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 92,63

(exc. VAT)

R 106,525

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

7,395 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 20	R 18.526	R 92.63
25 - 120	R 18.062	R 90.31
125 - 495	R 17.52	R 87.60
500 - 2495	R 16.82	R 84.10
2500 +	R 16.148	R 80.74

*price indicative

RS stock no.:: 751-5348
Mfr. Part No.:: ZXMHC6A07N8TC
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N, Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	350mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	3.2nC
	Maximum Power Dissipation Pd	1.36W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	150°C
	Transistor Configuration	Full Bridge
	Maximum Operating Temperature	-55°C
	Standards/Approvals	UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202
	Length	5mm
	Height	1.5mm
	Width	4 mm
	Number of Elements per Chip	4
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Channel Type Type N, Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 350mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 3.2nC
	Maximum Power Dissipation Pd 1.36W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature 150°C
	Transistor Configuration Full Bridge
	Maximum Operating Temperature -55°C
	Standards/Approvals UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202
	Length 5mm
	Height 1.5mm
	Width 4 mm
	Number of Elements per Chip 4
	Automotive Standard No

COO (Country of Origin):: CN

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

FREE delivery for orders over R 1,500.00

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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