MPN

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC

RS stock no.:: 751-5344
Mfr. Part No.:: ZXMHC3F381N8TC
Manufacturer:: DiodesZetex

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 96,13

(exc. VAT)

R 110,55

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

5 unit(s) ready to ship from another location
Plus 24,440 unit(s) shipping from 06 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 20	R 19.226	R 96.13
25 - 120	R 18.746	R 93.73
125 - 495	R 18.184	R 90.92
500 - 2495	R 17.456	R 87.28
2500 +	R 16.758	R 83.79

*price indicative

RS stock no.:: 751-5344
Mfr. Part No.:: ZXMHC3F381N8TC
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type P, Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.98A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	9nC
	Forward Voltage Vf	0.82V
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	1.35W
	Transistor Configuration	Full Bridge
	Maximum Operating Temperature	-55°C
	Length	5mm
	Width	4 mm
	Standards/Approvals	RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020
	Height	1.5mm
	Number of Elements per Chip	4
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Channel Type Type P, Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.98A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 9nC
	Forward Voltage Vf 0.82V
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 1.35W
	Transistor Configuration Full Bridge
	Maximum Operating Temperature -55°C
	Length 5mm
	Width 4 mm
	Standards/Approvals RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020
	Height 1.5mm
	Number of Elements per Chip 4
	Automotive Standard No

COO (Country of Origin):: CN

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC

FREE delivery for orders over R 1,500.00

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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