DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 6.4 A, 30 V Enhancement, 8-Pin SOIC ZXMC3A16DN8TA
- RS stock no.:
- 770-3393
- Mfr. Part No.:
- ZXMC3A16DN8TA
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
R 108,85
(exc. VAT)
R 125,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 750 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 20 | R 21.77 | R 108.85 |
| 25 - 120 | R 21.226 | R 106.13 |
| 125 - 245 | R 20.59 | R 102.95 |
| 250 - 495 | R 19.766 | R 98.83 |
| 500 + | R 18.976 | R 94.88 |
*price indicative
- RS stock no.:
- 770-3393
- Mfr. Part No.:
- ZXMC3A16DN8TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.5mm | |
| Standards/Approvals | RoHS, J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202 | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1.5mm | ||
Standards/Approvals RoHS, J-STD-020, UL 94V-0, AEC-Q101, MIL-STD-202 | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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