DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 850 mA, 100 V Enhancement, 8-Pin SOIC ZXMHC10A07N8TC
- RS stock no.:
- 751-5332
- Mfr. Part No.:
- ZXMHC10A07N8TC
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 112,49
(exc. VAT)
R 129,365
(inc. VAT)
Add 70 units to get free delivery
Temporarily out of stock
- Shipping from 03 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 22.498 | R 112.49 |
| 25 - 120 | R 21.936 | R 109.68 |
| 125 - 495 | R 21.278 | R 106.39 |
| 500 - 2495 | R 20.426 | R 102.13 |
| 2500 + | R 19.608 | R 98.04 |
*price indicative
- RS stock no.:
- 751-5332
- Mfr. Part No.:
- ZXMHC10A07N8TC
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 850mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.36W | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Full Bridge | |
| Standards/Approvals | RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | |
| Width | 4 mm | |
| Length | 5mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 850mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.36W | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Full Bridge | ||
Standards/Approvals RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | ||
Width 4 mm | ||
Length 5mm | ||
Height 1.5mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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