Vishay SQS Type P-Channel MOSFET, 44 A, 80 V Enhancement, 8-Pin 1212-8SLW SQS181ELNW-T1_GE3

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Subtotal (1 pack of 5 units)*

R 153,86

(exc. VAT)

R 176,94

(inc. VAT)

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  • Shipping from 27 July 2026
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Units
Per unit
Per Pack*
5 - 45R 30.772R 153.86
50 - 95R 30.002R 150.01
100 - 245R 29.102R 145.51
250 - 995R 27.938R 139.69
1000 +R 26.82R 134.10

*price indicative

Packaging Options:
RS stock no.:
280-0033
Mfr. Part No.:
SQS181ELNW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

80V

Series

SQS

Package Type

1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0593Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

119W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.82V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Vishay Automotive MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

AEC-Q101 qualified

Fully lead (Pb)-free device

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