Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

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Subtotal (1 pack of 5 units)*

R 165,68

(exc. VAT)

R 190,53

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 33.136R 165.68
50 - 95R 32.308R 161.54
100 - 245R 31.338R 156.69
250 - 995R 30.084R 150.42
1000 +R 28.88R 144.40

*price indicative

Packaging Options:
RS stock no.:
279-9988
Mfr. Part No.:
SISS4409DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

59.2A

Maximum Drain Source Voltage Vds

40V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

126nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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