Vishay SQS Type N-Channel MOSFET, 192 A, 30 V Enhancement, 8-Pin 1212-8SLW SQS120ELNW-T1_GE3
- RS stock no.:
- 280-0029
- Mfr. Part No.:
- SQS120ELNW-T1_GE3
- Manufacturer:
- Vishay
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Subtotal (1 reel of 3000 units)*
R 23 004,00
(exc. VAT)
R 26 454,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 7.668 | R 23,004.00 |
*price indicative
- RS stock no.:
- 280-0029
- Mfr. Part No.:
- SQS120ELNW-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | 1212-8SLW | |
| Series | SQS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0033Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Maximum Power Dissipation Pd | 119W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type 1212-8SLW | ||
Series SQS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0033Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Maximum Power Dissipation Pd 119W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
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