Vishay SQS Type N-Channel MOSFET, 16 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3
- RS stock no.:
- 268-8375
- Mfr. Part No.:
- SQSA82CENW-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 214,20
(exc. VAT)
R 246,325
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,050 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 8.568 | R 214.20 |
| 50 - 75 | R 8.354 | R 208.85 |
| 100 - 225 | R 8.103 | R 202.58 |
| 250 - 975 | R 7.779 | R 194.48 |
| 1000 + | R 7.468 | R 186.70 |
*price indicative
- RS stock no.:
- 268-8375
- Mfr. Part No.:
- SQSA82CENW-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 1212-8W | |
| Series | SQS | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.073Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 27W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 1212-8W | ||
Series SQS | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.073Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 27W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device. That is single configuration MOSFET and surface mount type device.
AEC Q101 qualified
ROHS compliant
Related links
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