Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3
- RS stock no.:
- 279-9980
- Mfr. Part No.:
- SISH103DN-T1-GE3
- Manufacturer:
- Vishay
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Subtotal (1 reel of 3000 units)*
R 101 613,00
(exc. VAT)
R 116 856,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 33.871 | R 101,613.00 |
*price indicative
- RS stock no.:
- 279-9980
- Mfr. Part No.:
- SISH103DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SISH | |
| Package Type | 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0089Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 41.6W | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SISH | ||
Package Type 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0089Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 41.6W | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
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