Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 31 776,00

(exc. VAT)

R 36 543,00

(inc. VAT)

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Per Reel*
3000 +R 10.592R 31,776.00

*price indicative

RS stock no.:
279-9987
Mfr. Part No.:
SISS4409DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

59.2A

Maximum Drain Source Voltage Vds

40V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

126nC

Maximum Power Dissipation Pd

56.8W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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