Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3

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Subtotal (1 pack of 5 units)*

R 154,12

(exc. VAT)

R 177,24

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 30.824R 154.12
50 - 95R 30.054R 150.27
100 - 245R 29.152R 145.76
250 - 995R 27.986R 139.93
1000 +R 26.866R 134.33

*price indicative

Packaging Options:
RS stock no.:
279-9996
Mfr. Part No.:
SISS5112DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40.7A

Maximum Drain Source Voltage Vds

100V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0149Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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