Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

R 147,56

(exc. VAT)

R 169,68

(inc. VAT)

Add to Basket
Select or type quantity
Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
4 - 56R 36.89R 147.56
60 - 96R 35.968R 143.87
100 - 236R 34.888R 139.55
240 - 996R 33.493R 133.97
1000 +R 32.153R 128.61

*price indicative

Packaging Options:
RS stock no.:
279-9994
Mfr. Part No.:
SISS5110DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.9A

Maximum Drain Source Voltage Vds

100V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0126Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

56.8W

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links