Vishay SISS Type N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 38 745,00

(exc. VAT)

R 44 556,00

(inc. VAT)

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Per Reel*
3000 +R 12.915R 38,745.00

*price indicative

RS stock no.:
280-0002
Mfr. Part No.:
SISS5808DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

66.6A

Maximum Drain Source Voltage Vds

80V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00745Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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