Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 16 968,00

(exc. VAT)

R 19 512,00

(inc. VAT)

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Per Reel*
3000 +R 5.656R 16,968.00

*price indicative

RS stock no.:
279-9983
Mfr. Part No.:
SISH107DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

34.4A

Maximum Drain Source Voltage Vds

30V

Series

SISH

Package Type

1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.014Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

26.5W

Typical Gate Charge Qg @ Vgs

41nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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